4 publications
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Improved Performance Characteristics of a Designed 1050 nm Bottom Emitting MQW VCSEL using Al0.25Ga0.22In0.53As/InP MaterialsBy Rinku Basak
Abstract: AbstractIn this work, the design and performance characteristics of a bottom emitting Al0.25Ga0.22In0.53As/InP Multi-Quantum Well (MQW) Vertical-Cavity Surface-Emitting Lasers (VCSEL) have been presented for operation at a wavelength of 1050 nm. The transparency carrier density and bandgap energy of the QW and barrier materials are computed. An improved performance of the designed VCSEL has been obtained by selecting a material with high gain and lower transparency carrier density in the …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 3, 2013 · pp. 22–30 Read article →
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Optimization of Indium Concentration for Obtaining Enhanced Performance of 980nm InxGa1-xAs/GaAs MQW VCSELsBy Rinku Basak
Abstract: AbstractIn this work, an optimization of Indium concentration of 980 nm InxGa1-xAs/GaAs MQW VCSELs is presented with the aim of improving dynamic performance of the VCSEL. An improved modulation performance is obtained by optimizing Indium concentration of x=0.2. A high modal gain and low transparency carrier density contributes to a high optical output power for In0.2Ga0.8As/GaAs MQW VCSEL. A highest modulation bandwidth of 11.625 GHz is obtained for In0.2Ga0.8As/GaAs MQW …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 14–21 Read article →
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High Modulation Performance of a Designed InGaN Based 405 nm Multi-Quantum Well Violet LaserBy Rinku Basak
Abstract: AbstractIn this work, the modulation performance characteristics of a designed 405 nm InGaN based multi-quantum well (MQW) Violet Laser are optimized and presented by varying injection current and differential gain. A maximum output power of 222.53 mW and a maximum resonance frequency of 18.79 GHz of the laser are obtained for 117 mA injection current, where, the differential gain is 4x10-16cm2. The differential quantum efficiency of the laser is obtained …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 7–13 Read article →
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Improved Performance Characteristics of A Designed 450 nm True Blue Laser Using InGaN/AlGaN MaterialsBy Rinku Basak
Abstract: AbstractIn this work, the characteristics of a designed 450 nm true blue semiconductor laser are presented. Performance and optimizations of the designed laser are presented using InGaN/AlGaN active layer materials. A maximum optical output power of the laser is obtained as 147.48 mW for 93 mA injection current and 1 × 10−16 cm2 differential gain, where, the threshold current is 9.3 mA. The modal gain is calculated as 69.774 cm−1 …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 1, 2013 · pp. 24–30 Read article →