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Design and Performance Analysis of a 635 nm Ga0.5In0.5P/(Al0.7Ga0.3)0.5In0.5P Multiple Quantum Well Separate Confinement Heterostructure Red Laser Considering Thermal LimitationsBy Tawsif Ibne Alam, Md. Abdur Rahim, Rinku Basak
Abstract: AbstractIn this work, the performance characteristics of a GaInP - based 635 nm multiple quantum well (MQW) separate confinement heterostructure (SCH) Red laser has been obtained through computations. The material gain of Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P MQW edge emitting laser (EEL) has been theoretically obtained. The peak material gain obtained from the analysis has been used for analyzing the performance of the designed double-heterostructure laser. A maximum output power of 71.18 mW and …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 1, 2013 · pp. 11–17 Read article →