3 publications
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Design and Performance Analysis of Full Adder Cell using FinFET Technique at 32nm TechnologyBy Saurabh Kumawat, Purushottam Kumawat, Akanksha Choudhary
Abstract: AbstractIn this paper, discussed is the comparative analysis of complementary MOS (CMOS) and dual gate-FinFET (fin shaped field effect transistor) based full adder cell design. To reduce the average power, average current and maximum current of 1-bit full adder circuit a new high DG-FinFET technique is presented. Use of double-gate FinFET technology provides low leakage and high performance operation. For MOSFET transistor model, a predictive technology model (PTM) BSIM4 and …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 1–8 Read article →
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Performance Analysis of Complimentary Pass Transistor Logic Based Multiplexer Using Dual-gate FinFET TechnologyBy Saurabh Kumawat, Purushottam Kumawat, Suchitra .
Abstract: AbstractThis paper presents the design and analysis of double gate FinFET complimentary pass transistor logic (CPL) multiplexer. The circuit of multiplexer (MUX) using CPL is used for comparison of performance parameters like average power consumption, rise/fall time, delay, slew rate, PDP and EDP. Multiplexer is a digital circuit, it has inputs and select line; select lines are used for select input lines to transfer data to the output end. The …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 41–48 Read article →
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Signal Integrity Analysis of Single Walled Carbon Nano Tube based Interconnects at 32 nm Technology NodeBy Purushottam Kumawat, Ashish Jha, Akansha Choudhary
Abstract: The rising demands for ultra-high-speed processors and portable devices have made the transistor and interconnect scaling a challenging issue in present days. In this work, the impedance parameter of copper and CNT based interconnects are calculated at 32 nm technology node for different lengths. The performances of CNT based interconnects are analyzed and compared with Cu based interconnects in terms of crosstalk. The conventional copper interconnects are not able to …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 33–42 Read article →