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Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain DopingBy Nitin Sachdeva, Munish Vashishath, P. K. Bansal
Abstract: In this paper, the concentration of poly-silicon doping and source/drain doping has been varied to obtain the approximation the OFF state leakage current for N channel MOSFET. A lightly doped NMOS has been designed using 45 nm technology in ATHENA and simulated in ATLAS of SILVACO TCAD tool. After simulation results, it has been observed that as the poly-silicon doping and source drain doping concentrations are decreased, there is a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 35–42 Read article →