2 publications
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Published Subscription
Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS DeviceBy Nitin Sachdeva, Munish Vashishath, P. K. Bansal
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 13–20 Read article →
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Published Subscription
Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS DeviceBy Nitin Sachdeva, Munish Vashishath, P. K. Bansal
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 13–20 Read article →