1 publication

• Published Subscription 4 Sep 2021

  Impact of Work Function Variations on Data Stability of FinFET based 6T SRAM Cell

  By Mitesh Limachia, Rajesh Thakker, Nikhil Kothari

  Abstract: The performance of FinFET SRAM cell is severely affected due to metal gate work function variations (WFV) in FinFET device. In order to provide guidelines for SRAM cell optimization, it is essential to examine the data stability due to the contribution of each cell transistor from WFV point of view. In this work, we investigate the effect of VTH variations of each transistor of tri-gated FinFET 6T SRAM cell on …

  Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 2, 2021 · pp. 1–13 Read article →