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Improvement of Design Issues in FinFET based Design Techniques for XOR and XNOR Circuits at 45 nm TechnologyBy Ashish Kumar Singhal, Neha Yadav
Abstract: The scaling of conventional CMOS circuit inclines to the short channel effect due to leakage current increase in the circuit. To minimize the short channel effect, FINFET can be used in place of conventional CMOS circuits. This paper demonstrates comparative performance study of high speed, low power and low voltage on XOR and XNOR digital circuit. This paper assesses and compares the performance of XOR and XNOR logic circuits. This …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 22–35 Read article →