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Designing of GaAs Based Resonant Tunneling Diode and Nano Scale Applications with Considering NEGFBy Mehedi Hasan, Md. Kamrul Hassan, M. Tanseer Ali
Abstract: Present situation of eletronic area in the world required small devices as well as low power dissipation and ultra high speed application. At this moment the presence of resonant tunneling diode can over come this type of problem and take a big role in nanoscale digital and analog applications.In this researh article is to demonestrated effect of asymmetric barrier with respect to symmetric barrier and digital inverter and THz analog …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 1–18 Read article →