2 publications

• Published Subscription 6 Apr 2019

  Design and Analysis of Inverters using Double Gate MOSFET

  By MD. Ibnul Bin Kader Arnub

  Abstract: AbstractThe double gate MOSFET is a form of MOSFET where two gates are fabricated along the length of the channel, one after another. There are several applications of double gate MOSFETs. It is possible to design logic gates using double gate MOSFETs. It is one of the digital applications of it. This paper interprets the design and analysis of different types of inverters using DG-MOSFET. The advantages of using DG-MOSFET …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 1–7 Read article →

• Published Subscription 26 Mar 2019

  GaN-based Double Gate MOSFET (DG-MOSFET)

  By MD. Ibnul Bin Kader Arnub

  Abstract: AbstractGaN is auspicious for high-power, high-temperature devices because of its large bandgap, and high saturation velocity compared with Si. Gallium nitride (GaN) based devices are expected to play an important role to develop the next-generation devices. The performance of GaN-based double gate (DG) MOSFETs have been explored with gate length (Lg) 10.6 nm. The ON-current (ION) and OFF-current (IOFF) are found to be 8.11´10–3 and 6.38605´10–9A/µm respectively, respectively with an …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 24–28 Read article →