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• Published Subscription 6 Jan 2021

  Performance Analysis of DG FinFET for Ultralow-power Subthreshold Applications

  By S. D. Pable, Md. A. Kafeel, Md. Hasan

  Abstract: Subthreshold operating region of transistor shows huge potential toward satisfying demand of ultralow power (ULP) consumption from handheld portable devices. However, operating device with such small subthreshold leakage current as a switching current gives huge penalty in their operating frequency. For subthreshold operating region key design goal is to boost the speed of the device. DG FinFET device shows excellent device characteristics in subthreshold operating region. In this paper, 1-bit …

  Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 26–33 Read article →