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Performance Analysis of Fe/SiO2/Fe MTJ and Ni/Al2O3/Ni MTJ-based Magnetoresistive Random Access Memories (MRAMs)By mayank chakraverty, P Arun Kumar, Harish M Kittur
Abstract: This paper reports the first principle simulations of Fe/SiO2/Fe and Ni/Al2O3/Ni magnetic tunnel junctions (MTJs). A performance analysis has been done based upon the device-level simulations of the two magnetic tunnel junctions followed by the circuit level simulations of magnetoresistive random access memory (MRAM) cell operating with the two MTJs respectively. From the device-level simulations, the two MTJs have been compared with regard to the bias dependence of TMR ratios, …
Published in Journal of VLSI Design Tools and Technology · Vol. 2, Issue 1-2-3, 2012 · pp. 92–100 Read article →