1 publication

• Published Subscription 30 Jan 2021

  Electrical Performance of the Silicon Nanowire Double Gate FET

  By Dayal C. Sati, Manoj Kumar, Vivek Kumar, Nripender .

  Abstract: Silicon nanowire (SiNW) metal-oxide-semiconductor field-effect transistor (MOSFET) is a promising candidate of future CMOS device for further scaling. As the cross-sectional dimensions of SiNW channel is very small, cross-sectional shapes should affect electrical characteristics of SiNW FETs. In this work, effects of cross-sectional shapes of gate stack formation on (i) properties of double gate of SiNW FET; (ii) carrier transport properties including on-current, effective carrier mobility and inversion charge density; …

  Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 3, 2020 · pp. 5–11 Read article →