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    Structural and Electrical Properties of Low-Energy Ion Beam Kr-Irradiated In/Se Bilayer

    Abstract: In the present work, In (~50 nm) over Se (~50 nm) thin films were deposited successively on an Si substrate by e-beam evaporation method under 2×10–5 mbar pressure. The In/Se bilayers were irradiated with low-energy ion beams of 350 keV Kr+1 with fluence of 3 × 1016 ions/cm2. The sample was subsequently characterized for phase formation using X-ray diffraction and thickness profile using Rutherford backscattering spectrometry analysis. In the pristine …

    Published in Journal of Polymer & Composites · Vol. 11, Issue 1, 2023 · pp. 91–96 Read article

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