1 publication

• Published Subscription 17 Apr 2018

  Review Paper: Low Power SRAM Cell using FinFET Technology

  By Mamta ., Surender Kumar Grewal

  Abstract: To make portable battery operated devices more efficient with low leakage current has become a major challenge with the technology scaling. As the technology is scaling, the bulk MOSFET faces various challenges which lead to increased leakage current. FinFET is the most encouraging substitute to bulk CMOS, because of the reduced short channel effect. The FinFET device based circuits portrays advantages with its better control over the device channel and …

  Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 43–47 Read article →