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• Published Subscription 29 Dec 2020

  FDTD-based Time Domain Analysis of CMOS Gate Driven Interconnects

  By M. Kavicharan, N. S. Murthy, N. Bheema Rao

  Abstract: Accurate time domain analysis of CMOS gate driven interconnects is important for the design and analysis of high performance VLSI systems. Conventionally, CMOS driver is approximated as a constant resistance instead of non-linear and time-varying MOS resistance, which causes inaccurate modeling of CMOS driver. This paper presents a new method for FDTD-based transient analysis of CMOS gate driven interconnect line using a generalized model. The generalized model of CMOS inverter …

  Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 16–21 Read article →