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A Review on Tunnel Field Effect Transistor for Ambipolar Suppression, Higher ON Current and a Lower Subthreshold SwingBy Radhika M. Somani, H. R. Upadhyay, K. Sujatha
Abstract: Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 55–66 Read article →