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• Published Subscription 13 Jan 2021

  Design and Optimization of Nano scale Double Gate SOI-MOSFET for Analog Applications Using SILVACO TCAD

  By Indra Vijay Singh, M. S. Alam

  Abstract: In this paper the structure effect on electrical characteristics of 60-nm double-gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor (DG-SOI-MOSFETs) is explored. These structures enable more aggressive device scaling in nano scale region because of their ability to control short channel effects. Established a scaling theory which gives guidance for the device optimization (Silicon film thickness Tsi (20nm); gate oxide thickness Tox (3nm); buried oxide thickness Tbox (200nm) and gate length LG …

  Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 7–17 Read article →