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Spin Reorientation of CoPt/AlN and Gd Films Described by Third Order Perturbed Heisenberg HamiltonianBy N. U.S. Yapa, E. M.P. Ekanayake, P. Samarasekara
Abstract: Spin reorientation of experimentally synthesized CoPt/AlN and Gd films has been described using third order perturbed Heisenberg Hamiltonian. Easy axis oriented ferromagnetic thin films find potential applications in magnetic memory devices and MMIC. Spin exchange interaction energy, long range dipole interaction energy, magnetic anisotropy energies, magnetostatic energy, stress induced anisotropy and demagnetization energy were taken into account. Values of these parameters of particular bulk magnetic materials were employed for this …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 11, Issue 1, 2021 · pp. 37–45 Read article →