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    A Reliable Low Standby Power 6T SRAM Cell

    Abstract: The project introduces a low standby power 10T (LP10T) SRAM cell that focuses on achieving high read stability and write-ability while minimizing power consumption. The LP10T SRAM cell uses a robust cross-coupled design that combines a Schmitt-trigger inverter with a double-length pull-up transistor and a regular inverter with a stacking transistor. One of the key advantages of the LP10T SRAM cell is that it separates the read path from the …

    Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 1, 2023 · pp. 33–59 Read article

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