1 publication

• Published Subscription 2 Apr 2018

  Schmitt-Trigger Based 12T SRAM Cell with Enhanced Stability

  By S. R. Mansore, R. S. Gamad, D. K. Mishra

  Abstract: In this work, we present a single-ended Schmitt-trigger (ST) based 12T static random access memory (SRAM) cell. The proposed cell employs cross-point data aware write structure, and thus supports bit interleaving architecture to mitigate soft errors. The proposed cell does not suffer from read disturbance as bit line is completely isolated from bit storage node. Simulation is done on 180 nm CMOS technology on Cadence. Read static noise margin (RSNM) …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 5–10 Read article →