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• Published Subscription 4 May 2022

  Understanding of optical power in semiconductor based SOI Structure at the signal 1550 nm

  By Gopinath Palai, N. Gupta, K.P. Swain, C.S Mishra, S.K. Mohanty, B.A. Kumar

  Abstract: A silicon-on-insulator (SOI) structure consists of a single crystalline silicon layer separated from the bulk substrate by a thin insulator layer. The insulator in SOI wafers is usually always a thermal silicon oxide (SiO2) layer, with a silicon wafer as the substrate. The silicon sheet can be very thin (50 nm for fully depleted transistors) or tens of micrometres thick, depending on the application. Similarly, the thickness of buried oxide …

  Published in Trends in Opto-electro & Optical Communication · Vol. 12, Issue 1, 2022 · pp. 19–23 Read article →