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Energy Minimization by Nanotechnology Structures based on CNTFET GaAsBy Anshu Chandola
Abstract: AbstractIn this study, we will compare the carbon nanotube-based field effect transistors with the conventional MOSFET (metal–semiconductor field-effect transistor) on the basics of various parameters like effect of temperature, its channel length, its capacitance, and its operating frequency. The purpose of this comparison between these two transistors is that due to the reason of scaling down of size of the transistor in nanometers so that more components can be fabricated …
Published in Journal of Web Engineering & Technology · Vol. 6, Issue 3, 2019 · pp. 23–28 Read article →