1 publication
-
Published Subscription
Influence of Graded Channel on Performance of Symmetric Double Material Gate Insulator FDSOI MOSFETBy Anjali Gupta, R. K. Chauhan
Abstract: Abstract: In this paper, we investigate the effect on the linearity, analog and RF performance of graded channel in case of hetero-gate-dielectric FDSOI MOSFET with higher doping at source end and low doping at drain end. The major figure of merits (FOMs) studied are on-state drive current (ION), transconductance (gm), total gate capacitance (Cgg), cut-off frequency (fT), higher order derivative of transconductance (gm’, gm’’), intermodulation distortion (IMD3) and third- order …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 1, 2019 · pp. 12–17 Read article →