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• Published Subscription 9 Aug 2019

  Simulation Study of Tapered Shape FinFET

  By A. Shrivastava, S. Singh, A. Acharya, G Musalgaonkar

  Abstract: During recent years, nonplaner tri-gate (TG) field-effect transistors (FETs) such as FinFETs have been extensively studied for the enhancement of electrostatic control and suppression of short-channel effects (SCEs) in the sub50 nm regime. As the device scaled, it is observed that the shape of the rectangular FinFET becomes tapered shape. This paper presents the design and analysis of a tapered-shaped FinFET. By varying the sidewall inclination angle of a rectangular …

  Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 21–31 Read article →