parasitic inductance
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Thermo-Parasitic-Aware Adaptive Switching Model (TPASM) for High-Frequency Microelectronic Power Devices
Abstract: The increasing switching frequency of modern solid-state semiconductor devices has intensified the influence of parasitic inductance, parasitic capacitance, temperature-dependent conduction losses, and transient voltage and current stresses. Conventional switching-loss models generally treat these effects independently, resulting in limited accuracy when the device operates under high-frequency and thermally varying conditions. This paper proposes a Thermo-Parasitic-Aware Adaptive Switching Model (TPASM) for coupled electrical, thermal, and parasitic analysis of high-frequency solid-state devices. The …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article