Journal of Microelectronics and Solid State Devices
Volume 5, Issue 3 (2018)
Published
Table of contents
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A Novel Design for High Speed & Area Efficient Compressor Based Vedic Multiplier
Abstract: Multipliers are the most important part in any arithmetic and logic unit, AbstractMultipliers are the most important part in any arithmetic and logic unit, accumulators and digital signal processors. Due to the increasing constraints on delay, the design of faster multipliers is emphasized. Among several multipliers, Vedic multipliers are preferred for their speed of operation. Here the proposed Vedic multiplication techniques are based on “URDHVA TIRYAKBHYAM” a fast and efficient …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 1–10 Read article
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Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article
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Efficient ADP Scheme for DWT Computation
Abstract: AbstractIn this paper, the lifting and flipping scheme for discrete wavelet transform (DWT) computation and proposed an area delay efficient lifting based DWT architecture. In this computation huge number of multipliers and adders are saved when lifting based 2-D DWT architecture implemented. The derived full-parallel lifting-based 1-level 2-D DWT structure involves half number of less multiplier than the flipping-based 2-D DWT structure. Compared with the existing lifting-based structure, the proposed …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 22–26 Read article
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Ultra Low-Power 9-Transistor Flip-Flop Design
Abstract: AbstractThe use of very large scale integration technology in high performance computing, wireless communication, consumer electronics has been rising at a very fast rate. The challenge for VLSI technology is mainly in leakage power consumption. Flip-Flops (FFs) are the basic storage elements used extensively in digital system designs. It accounts for 20%–45% of the total system power and may considerably impact the chip area. In this paper, an ultra-low-power true …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 27–32 Read article
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Analysis of DIBL Effect in MOSFET Working
Abstract: AbstractOne of the most widely used electronic devices, particularly in digital integrated circuits, is the metal insulator semiconductor (MIS) transistor. Most of the existing transistors used in fabrication of integrated chips are with junctions. The device scaling is growing the channel length between junctions in devices are scaling gone down to 10 nm. Drain Induced Barrier Lowering (DIBL) effect is prominent as the feature size of MOS device keep diminishing. …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 33–40 Read article