Journal of Microelectronics and Solid State Devices
Volume 13, Issue 1 (2026)
Table of contents
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Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications
Abstract: The continuous scaling of conventional memory technologies is increasingly constrained by limitations in power consumption, speed, endurance, and integration density. As data-intensive applications such as artificial intelligence, Internet of Things, and edge computing demand fast and energy-efficient memory solutions, alternative non-volatile memory technologies have gained significant attention. Ferroelectric materials, characterized by their reversible spontaneous polarization, offer a promising pathway toward next-generation non-volatile memory due to their intrinsic non-volatility, low operating …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 1–9 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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An Overview on MOSFET based Sensor Design
Abstract: In the past two decades the MOSFET has transformed from a simple switch in digital logic to an analog powerhouse that can be cofabricated with the sensing material on a single chip. MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) have silently become the beating heart of modern sensor platforms, translating the faint whispers of physical, chemical, and biological phenomena into robust electrical signatures. This abstract surveys the latest advances that have turned the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 20–26 Read article
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Music Reactive led using Arduino
Abstract: In recent years, the integration of technology into interactive systems has garnered significant attention. Among the many applications, music-reactive LED systems have become popular, offering dynamic visualizations that respond to audio inputs. This paper explores the development and implementation of a music-reactive LED system using Arduino, focusing on real-time audio signal processing and LED control based on the frequency spectrum of the sound. By utilizing Fast Fourier Transform (FFT) algorithms …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 27–33 Read article
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High Performance Multi-Valued Logic (MVL)Gate Design Using FinFET
Abstract: CMOS scaling faces challenges such as leakage, power dissipation, and short channel effects. Multi-Valued Logic (MVL) offers higher information density and reduced interconnections. This work presents a FinFET-based MVL gate design that improves electrostatic control, switching speed, and reliability. Simulation results confirm reduced leakage power and enhanced performance compared to conventional logic. The proposed architecture demonstrates scalability for advanced technology nodes. It also shows potential for low-power applications in portable …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 34–45 Read article