2 publications
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Published Subscription
Design and Performance Analysis of Full Adder Cell using FinFET Technique at 32nm TechnologyBy Saurabh Kumawat, Purushottam Kumawat, Akanksha Choudhary
Abstract: AbstractIn this paper, discussed is the comparative analysis of complementary MOS (CMOS) and dual gate-FinFET (fin shaped field effect transistor) based full adder cell design. To reduce the average power, average current and maximum current of 1-bit full adder circuit a new high DG-FinFET technique is presented. Use of double-gate FinFET technology provides low leakage and high performance operation. For MOSFET transistor model, a predictive technology model (PTM) BSIM4 and …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 1–8 Read article →
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Published Subscription
Performance Analysis of Complimentary Pass Transistor Logic Based Multiplexer Using Dual-gate FinFET TechnologyBy Saurabh Kumawat, Purushottam Kumawat, Suchitra .
Abstract: AbstractThis paper presents the design and analysis of double gate FinFET complimentary pass transistor logic (CPL) multiplexer. The circuit of multiplexer (MUX) using CPL is used for comparison of performance parameters like average power consumption, rise/fall time, delay, slew rate, PDP and EDP. Multiplexer is a digital circuit, it has inputs and select line; select lines are used for select input lines to transfer data to the output end. The …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 41–48 Read article →