1 publication

• Published Subscription Review Article 28 Sep 2026

  Graphene and 2D-Material-Based Transistors for Next-Generation Nanoelectronics: Device Modeling and Performance Analysis

  By Anup Sanjay Dighe, Om Bhaskar Darade, Sahil Shashikant Godase, Vijaysinh Prakash Gaikwad, Vaibhav Godase

  Abstract: The continuous scaling of conventional silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has created increasing challenges related to short-channel effects, leakage current, electrostatic control, power consumption, and variability. Two-dimensional (2D) materials have emerged as promising channel materials for future nanoelectronics devices because of their atomically thin thickness, strong electrostatic controllability, and van der Waals interfaces provide opportunities for aggressive device scaling. Graphene, transition-metal dichalcogenides (TMDs), black phosphorus, hexagonal boron nitride, and related …

  Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article →