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Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate DielectricBy N. Bora, R. Subadar
Abstract: AbstractIn this report, we present a comparative analysis of ultrashort 3-D junctionless nanowire DGMOS transistors using different high-k gate dielectric by virtually fabricating the device in Visual TCAD. The ultrashort devices having channel length of 20 nm were simulated and performances like I-V characteristics, transconductance etc. were analysed. It was found that HfO2 has better steady state performances as gate dielectric owing to better control of the channel over the …
Published in Journal of Communication Engineering & Systems · Vol. 9, Issue 1, 2019 · pp. 35–42 Read article →