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Voltage-controlled TCR (Temperature Sensitivity) in Nanostructured Y0.95Ca0.05MnO3/Si, p-n Junction DiodeBy Davit Dhurv, J. H. Markna, P. S. Solanki, Nikesh A. Shah
Abstract: The authors deposited a p-type Y0.95Ca0.05MnO3 on the n-type Si substrate using chemical solution deposition and form nanostructured Y0.95Ca0.05MnO3/n-Si, p-n junction diode with typical thickness of about 100 nm with polycrystalline in nature. The diode exhibits rectifying properties over the temperature range of 100–300 K. Voltage-dependent temperature sensitivity of Y0.95Ca0.05MnO3/n-Si, p-n junction diode has been studied in current perpendicular to film plane (CPP) geometry. The maximum percentage of TCR values …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 4, Issue 1, 2014 · pp. 29–32 Read article →