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Improvements in Analog Performance of Dual Metal Gate based Silicon-on-Insulator Junctionless Transistor with Pocket Doped WindowBy Priyansh Tripathi, Narendra Yadava, Mangal Deep Gupta, R. K. Chauhan
Abstract: This paper elucidates the impact of pocket doped window on the analog performance of dual metal gate based silicon-on-insulator junctionless transistor (DMG SOIJLT). The analog parameters of proposed SOIJLT is compared with DMG based conventional SOIJLT. The findings of analog performance comparison reveal that transconductance (gm), transconductance generation factor (TGF), output conductance (gd), output resistance (r0), intrinsic gain (AV), and cut-off frequency (fT) have improved for DMG PD-SOIJLT as compared …
Published in Journal of Microelectronics and Solid State Devices · Vol. 8, Issue 1, 2021 · pp. 1–8 Read article →