1 publication

• Published Subscription 19 Mar 2018

  Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs

  By Sanjib Kalita, Laishram Thoibileima Chanu, Subhadeep Mukhopadhyay

  Abstract: AbstractIn this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium nitride nucleation layer on the drain characteristics is significant in single-heterojunction AlGaN/GaN HEMTs. The effects of drain voltage and gate voltage on the drain current are studied in the designed and simulated device structures. This simulation work may be a useful prediction to fabricate the …

  Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 9–12 Read article →