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A Comparative Analysis of Characterization of Silicon Nanowire and CNT FETsBy Vivek Kumar, Manoj Kumar, Dayal C. Sati, Rohit .
Abstract: The CMOS technology has been replaced by nano-scale semiconductor devices for future nanotechnology. These nano scale semiconductor devices have been replaced by nanowire FET and CNT FET due to their outstanding device physics. In this paper, a comparative analytical study on the basis of their operation, characteristics, structure and design has been investigated. HSPICE has been used to simulate CNT FET and comparison has been done with nanowire FET. The …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 10, Issue 2, 2020 · pp. 37–49 Read article →