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• Published Subscription 18 May 2018

  Studies on Electrical and Thermal Transport of InN based on Two Layer Model

  By A. Chakraborty, B. Sharma, C. K. Sarkar

  Abstract: InN, a material of huge potential in device applications, is grown on sapphire substrate. But due to the high lattice mismatch between the sapphire and InN, the large number of dislocations develops near the interface between the two materials. However, the density of threading dislocation falls sharply in the bulk layer. The charge density has also similar variation. Therefore, the bulk InN crystal may be treated to be consisting of …

  Published in Research & Reviews : Journal of Physics · Vol. 2, Issue 2, 2013 · pp. 17–21 Read article →