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Internal Lattice Structure and Local Order of Ge Atoms Structure in Amorphous Mn doping GeTe Thin FilmsBy Adam A bdalla Elbashir Adam
Abstract: Phase-change Magnetic materials (PCMMs) represent the leading candidates for universal data storage devices, which exploit the large difference in the physical properties of their transitional lattice structures. Here, an experimental study was done to investigate the internal lattice structure and local order of Ge atoms in amorphous Mn doping GeTe thin films. The microstructure of the as-deposited films of Ge1-xMnxTe thin films (with x = 0.06, 0.13, 0.52 and 0.61) …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 7, Issue 3, 2020 · pp. 9–15 Read article →