1 publication

• Published Subscription 18 May 2018

  Numerical Simulation and Modeling of Graphene Field Effect Transistors for High Frequency Applications

  By Ashish Jha, A. D. D Dwivedi

  Abstract: AbstractIn this paper numerical simulation of graphene field effect transistor (GFET) has been performed using finite element method by solving Poisson's equation, continuity equation and energy balance equation self consistently. Various performance characteristics including charge distribution, band gap energy, transfer and output characteristics, electrostatic potential distribution and transconductance have been extracted.Keywords: Graphene field effect transistor (GFET), energy balance equation, mobility, ambipolar, numerical simulationCite this ArticleAshish Jha, Dwivedi ADD. Numerical Simulation …

  Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 27–33 Read article →